Memory redundancy programming

ABSTRACT

A method and apparatus is provided for performing a redundancy programming. The system of the present invention includes a device testing unit for performing a memory test. The system also includes a memory device operatively coupled to the device testing unit. The memory device includes an access transistor that includes a charge trapping area. A threshold voltage of the access transistor is modified upon trapping of charges in the charge trapping unit. The memory device also includes a memory element and a fuse associated with the memory element. The fuse is capable of entering an alternative state in response to modifying the threshold voltage of the access transistor. The state of the fuse may be used to program or de-program the memory element.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates generally to a semiconductor memory device, and,more specifically, to programming redundancy in memory devices.

2. Description of the Related Art

Modern integrated circuit devices are comprised of millions ofsemiconductor devices, e.g., transistors, formed above a semiconductorsubstrate, such as silicon. These devices are very densely packed, i.e.,there is little space between them. Similarly densely packedelectrically conducting lines may also be formed in the semiconductorsubstrate. By forming selected electrical connections between selectedsemiconductor devices and selected conducting lines, circuits capable ofperforming complex functions may be created. For example, bits of datamay be stored by providing electrical current to a plurality of bitlines and an orthogonal plurality of word lines that may be electricallycoupled to one or more capacitors in a semiconductor memory.

The semiconductor memory may be a dynamic random access memory, a flashmemory, and the like. The semiconductor memory typically comprises anarray of memory cells, address decoding circuitry for selecting one, ora group, of the memory cells for reading or writing data, sensingcircuitry for detecting the digital state of the selected memory cell ormemory cells, and input/output lines to receive the sensed data andconvey that information for eventual output from the semiconductormemory. In many cases, the array of memory cells will be sub-dividedinto several sub-arrays, or subsets, of the complete collection ofmemory cells. For example, a semiconductor memory having 16 megabits(2²⁴ bits) of storage capacity may be divided into 64 sub-arrays, eachhaving 256K (2¹⁸) memory cells.

When manufacturing memory devices, several testing and quality controlprocedures are performed to insure that a minimum standard of quality ofthe memory product is present upon completion of manufacturing.Generally, manufacturers are not capable of producing memory devicesthat are completely defect free or failure free. In order to achieve apredetermined yield, an ability to perform testing, which includesprogramming in or programming out various elements of a memory device,is desirable. For example, faulty elements in memory devices may beprogrammed “out” and other redundant elements may be programmed “in”during the manufacturing of a memory device. This practice of redundancymay be used to reduce the amount of faults in a memory device.

Generally, state of the art technology calls for implementing two typesof redundancy corrections; fuse based programming and anti-fuse basedprogramming. In the state of the art, some manufacturers employ a laserprogrammable fuse where a metal or a polysilicon link is used.Generally, a laser may be driven within a specific location to eradicatea location in memory; thereby implementing the blowing of a fuse usinglaser energy. This process forms a discontinuity in the conductorassociated with that particular memory element. Subsequently, a sensecircuitry may be able to sense an open circuit versus a conductive path,which provides the testing device 310 with an indication that aparticular memory element has been eliminated. Thus, the faulty elementis eliminated from the memory device.

State of the art memory programming methods may also include providing alarge amount of current to blow a fuse causing a discontinuity; therebyeliminating a particular element from the memory device. Among theproblems associated with implementing such redundancy programming mayinclude the fact that a laser implementation requires a line of sight toinvoke the laser energy; thereby the time that the redundancyprogramming may take place is limited. If a memory device is packagedthen the laser implementation would not be possible. Additionally, inthe large current method, large amounts of currents are required toprovide controlled blowing of fuses, which may cause inefficienciesduring manufacturing.

Manufacturers have also implemented anti-fuse programming of memory,where a connection to an element in the memory device is enabled bycausing an existing open circuit to become electrically short. Manytimes, a pulsing current may be sent to an open circuit to actuallycause a particular memory element to short, thereby invoking conductionthrough that particular element and programming it. In order to sensethe result of this programming event, a high resistance and a lowresistance detection is performed in order to determine whether aparticular element in the memory device has been programmed. Theanti-fuse method may also result in various inefficiencies in themanufacturing or memory devices, including problems created by thecurrent pulse, and inefficiencies in detecting the programming.

The present invention is directed to overcoming, or at least reducing,the effects of, one or more of the problems set forth above.

SUMMARY OF THE INVENTION

In one aspect of the instant invention, a device is provided forperforming a redundancy programming. The device of the present inventionincludes an access transistor that includes a charge trapping area. Athreshold voltage of the access transistor is modified upon trapping ofcharges in the charge trapping unit. The device also includes a memoryelement and a fuse associated with the memory element. The fuse iscapable of entering an alternative state in response to modifying thethreshold voltage of the access transistor. The state of the fuse may beused to program or de-program the memory element.

In another aspect of the instant invention, a circuit is provided forperforming a redundancy programming. The circuit of the presentinvention includes an access transistor that includes a charge trappingarea. A threshold voltage of the access transistor is modified upontrapping of charges in the charge trapping unit. The circuit alsoincludes a memory element and a fuse associated with the memory element.The fuse is capable of entering an alternative state in response tomodifying the threshold voltage of the access transistor. The state ofthe fuse may be used to program or de-program the memory element.

In another aspect of the instant invention, a system board is providedfor performing a redundancy programming. The system board of the presentinvention includes a controller for performing a memory operation. Thesystem board also includes a memory device operatively coupled to thecontroller. The memory device is capable of providing memory access tothe controller. The memory device includes an access transistor thatincludes a charge trapping area. A threshold voltage of the accesstransistor is modified upon trapping of charges in the charge trappingunit. The memory device also includes a memory element and a fuseassociated with the memory element. The fuse is capable of entering analternative state in response to modifying the threshold voltage of theaccess transistor. The state of the fuse may be used to program orde-program the memory element.

In yet another aspect of the instant invention, a system is provided forperforming a redundancy programming. The system of the present inventionincludes a device testing unit for performing a memory test. The systemalso includes a memory device operatively coupled to the device testingunit. The memory device includes an access transistor that includes acharge trapping area. A threshold voltage of the access transistor ismodified upon trapping of charges in the charge trapping unit. Thememory device also includes a memory element and a fuse associated withthe memory element. The fuse is capable of entering an alternative statein response to modifying the threshold voltage of the access transistor.The state of the fuse may be used to program or de-program the memoryelement.

In another aspect of the instant invention, a method is provided forperforming a redundancy programming. The method of the present inventionincludes programming a memory element in a memory device by controllinga threshold voltage associated with the memory device. Controlling thethreshold voltage includes controlling the threshold voltage of anaccess transistor in the memory device by trapping charges in a chargetrapping area of the access transistor. The threshold voltage of theaccess transistor is modified upon trapping of charges in the chargetrapping unit. Programming the memory element also includes activating afuse coupled to the memory element in response to changing the thresholdvoltage, for activating the memory element.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention may be understood by reference to the followingdescription taken in conjunction with the accompanying drawings, inwhich like reference numerals identify like elements, and in which:

FIG. 1 is a block diagram of a system including a device that is capableof accessing digital signals, in accordance with one embodiment of thepresent invention;

FIG. 2 is a more detailed block diagram representation of the memoryunit of FIG. 1, in accordance with one illustrative embodiment of thepresent invention;

FIG. 3 illustrates a system for performing a redundancy programming ofmemory in accordance with one illustrative embodiment of the presentinvention;

FIG. 4 depicts a stylized illustration of a cross-section of atransistor, in accordance with one illustrative embodiment of thepresent invention;

FIG. 5 illustrates a more detailed block diagram of the memory unit ofFIGS. 1, 2, and 3, in accordance with one illustrative embodiment of thepresent invention; and

FIG. 6 illustrates a more detailed illustration of a fuse set associatedwith a memory cell of FIG. 5, in accordance with one illustrativeembodiment of the present invention.

While the invention is susceptible to various modifications andalternative forms, specific embodiments thereof have been shown by wayof example in the drawings and are herein described in detail. It shouldbe understood, however, that the description herein of specificembodiments is not intended to limit the invention to the particularforms disclosed, but on the contrary, the intention is to cover allmodifications, equivalents, and alternatives falling within the spiritand scope of the invention as defined by the appended claims.

DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS

Illustrative embodiments of the invention are described below. In theinterest of clarity, not all features of an actual implementation aredescribed in this specification. It will of course be appreciated thatin the development of any such actual embodiment, numerousimplementation-specific decisions must be made to achieve thedevelopers' specific goals, such as compliance with system-related andbusiness-related constraints, which will vary from one implementation toanother. Moreover, it will be appreciated that such a development effortmight be complex and time-consuming, but would nevertheless be a routineundertaking for those of ordinary skill in the art having the benefit ofthis disclosure.

Embodiments of the present invention provide for implementing aredundancy programming utilizing an electron charge trapping techniqueto program a particular element of a memory device into an active stateor to de-program a memory element into an inactive state. The presentinvention provides for using hot electron charge trapping on a device(e.g., a transistor) in order to program it as a fused or a non-fusedelement. Among the various advantages provided by implementing thepresent invention includes the fact that standard memory access devicetype layout and type structures may be used to implement the redundancyprogramming provided by the present invention. The present inventionprovides for shifting the threshold voltage (V_(t)) of the programmingdevice. The change in the threshold voltage may be sensed to determinewhether a particular element in the memory device has been programmed.In many manufacturing process areas, charge trapping is a phenomenonthat is avoided by implementing various implants into the memory device.The present invention calls for removing particular masks duringprocessing of semiconductor wafers in order to block certain areas wherea charge trapping mechanism is provided; thereby providing the abilityto use the charge trapping for programming various elements of thememory device.

Referring to FIG. 1, a block diagram of a system 100 is illustrated, inaccordance with one embodiment of the present invention. The system 100comprises a first device 110, which, in one embodiment, may comprise amemory unit 130 capable of storing data. In one embodiment, the memoryunit 130 may be a dynamic random access memory (DRAM), a static randomaccess memory (SRAM), a pseudo-static static random access memory(PSRAM), a double-data rate synchronous DRAM (DDR SDRAM, DDR I, DDR II),a Rambus™ DRAM (RDRAM), a FLASH memory unit, or the like. The firstdevice 110 may be accessed by a second device 125, which, in oneembodiment, may be an accessing/access device. The second device 125 maysend addresses on a line 150 to the first device 110. The first device110 may then provide data to the second device 125 on a line 160. Thefirst and second devices 110, 125 may comprise a control unit 120capable of accessing data (including code) stored in the memory unit 130of the first device 110. The second device 125 may be any device thatuses the first device 110 to store data, read data, or both. Examples ofthe second device 125 may include, but are not limited to, a computer, acamera, a telephone, a television, a radio, a calculator, a personaldigital assistant, a network switch, and the like.

The control unit 120, in one embodiment, may manage the overalloperations of the second device 125, including writing and reading datato and from the first device 110. The control unit 120 may comprise amicroprocessor, a microcontroller, a digital signal processor, aprocessor card (including one or more microprocessors or controllers), amemory controller, or other control or computing devices.

In one embodiment, the first device 110 may be a memory chip device,such as a DRAM device, an SRAM device, a FLASH memory device, and thelike. In one embodiment, the first device 110 may be a memory chipdevice that may be implemented into a digital system, such as a computersystem. In an alternative embodiment, the first device 110 may be anexternal memory, such as a memory stick, and may be accessed wheninserted into a slot (not shown) of the second device 125. When insertedinto the slot, the second device 125 may provide the appropriate powerand control signals to access memory locations in the first device 110.The first device 110 may be external to, or internal (e.g., integrated)to, the second device 125. The second device 125, which may be acomputer system, may employ a first device 110 (in the form of a memoryunit) that is integrated within the computer system to store data (e.g.,BIOS [basic input/output system]) related to the computer system.

Turning now to FIG. 2, a more detailed block diagram depiction of thememory unit 130 in a system board 205, in accordance with oneillustrative embodiment of the present invention, is provided. In oneembodiment, the memory unit 130 comprises a memory controller 220, whichis operatively coupled to one or more memory arrays 210. The memorycontroller 220 may comprise circuitry that provides access (e.g., suchas storing and extracting data to and from the memory arrays 210) tocontrol operations of the memory unit 130. The memory array 210 mayinclude an array of memory storing modules (e.g., memory cells 240) thatare capable of storing data. The memory unit 130 includes devices thatallow for the charge-trapping techniques provided by embodiments of thepresent invention for programming various elements of the memory unit130. The memory unit 130 may reside on the system board 205, such as aPC board or a motherboard. The system board 205 may also comprise aprocessor 206 that includes a controller 208 for controlling theoperation of the memory unit 130.

Turning now to FIG. 3, a device testing unit 310 that is used to testvarious memory elements of the memory unit 130 is illustrated. A devicetesting unit 310 may sense various elements of the memory unit 130,which then may be used to program or de-program the elements in thememory unit 130. For example, defective memory elements or areas of thememory unit 130 may be de-programmed and replaced with redundant memoryelements to provide an acceptable yield of memory units 130 beingmanufactured. In one embodiment, the device testing unit 310 maycomprise various circuits that are capable of programming the variouselements in the memory unit 130. The device testing unit 310 maycomprise a redundancy programming unit 320, which is capable ofprogramming or de-programming various elements in the memory unit 130.The redundancy programming unit 320 may comprise one or more currentdrivers 340 that are capable of driving various currents as determinedby the device testing unit 310. The device testing unit 310 may alsocomprise a sense unit 330, which is capable of detecting the conditionof a particular element. This data may then be used to determine whethera particular memory element has been programmed or de-programmed. Theredundancy programming unit 320 receives data relating to theprogramming and de-programming of various memory elements. Using thisdata, device testing unit 310 may determine the status of variouselements in the memory unit 130. The redundancy programming unit 320 iscapable of utilizing the charge trapping approach provided by thepresent invention to program or de-program various memory elements ofthe memory unit 130. Implementing the present invention provides variousadvantages, such as not requiring high current to program variouselements of the memory unit 130, thereby reducing the size of variouscircuits that are used to program the memory unit 130.

Additionally, a smaller drive and smaller sensors may be used to performredundancy programming of the memory unit 130. Furthermore, the variouselements of the memory unit 130 may also be reduced in size as a resultof implementing the concepts provided by the present invention. Variousembodiments of the present invention may be implemented using theexisting structure of the wafers that are used to manufacture memorydevices. Therefore, concepts of the present invention may be implementedrequiring only a relatively few or no additional processing of thewafers when producing memory units 130.

Turning now to FIG. 4, a stylized, cross-sectional diagram of a portionof a wafer used to manufacture a memory unit/device 130 is illustrated.More specifically, a cross-section of a particular transistor associatedwith a memory element of the memory unit 130 is illustrated. Thetransistor 400 illustrated in FIG. 4 comprises a source terminal 410, agate terminal 420, and a drain terminal 430. The source terminal 410 iscoupled to a first substrate region 440. The gate terminal 420 iscoupled to a second substrate region 450. The drain terminal 430 iscoupled to a third substrate region 460. FIG. 4 illustrates a chargetrapped region 470, which provides for utilizing the charge trappingredundancy program provided by the present invention.

As illustrated in FIG. 4, the charge trapping region 470 lacks an LDDregion, thereby providing for trapping charges under a spacer, which maybe raised above the threshold voltage for the transistor 400. Theprogramming method utilized by the present invention includes groundingthe gate 420, a grounded source 410, and a grounded substrate 440, 450,460; and providing high voltage on, the drain node 430. This allows fora charge to be trapped into the charge trapping region 470 of thetransistor 400, which may be the access transistor to a particularelement in the memory unit 130. This charge trapping will generallyresult in a change in the threshold voltage of the transistor 400,thereby changing the active state or inactive state of a particularelement in the memory unit 130.

Once the threshold voltage of the transistor 400 is changed, the devicetesting unit 310 may sense the change in the threshold voltage using thesense unit 330. In one embodiment, the sense unit 330 may comprise oneor more sense amplifiers (not shown) capable of sensing a change in thethreshold voltage. Therefore, a comparison may be made by the devicetesting unit 310 between non-programmed elements and programmed elementsof the memory unit 130 to determine which elements of the memory unit130 are programmed or not programmed. The programmed and non-programmedareas of the memory unit 130 will turn on at different times where onewill have a low conduction and the other will have a higher conduction.

In one embodiment, the threshold voltage utilizing the charge trappingmethod described herein may be shifted by approximately 200 millivolts,but is not limited to such voltage. Therefore, a relatively reliablemeasurement can be made to determine whether a particular element in thememory unit 130 is programmed or non-programmed. In other words, thethreshold voltage may be manipulated to actually program a particularelement and then the threshold voltage may be used to determine whethersuch programming has been implemented.

FIGS. 5 and 6 illustrate various implementations of the embodiments ofthe present invention. As shown in FIG. 5, one embodiment of the variouselements of the memory unit 130 in accordance with one embodiment of thepresent invention is illustrated. As illustrated in FIG. 5, the memoryunit 130 may comprise various memory cells that have accompanying fusesets 530, which may be programmed “in” or “out”. The memory unit 130comprises a first fuse set 530 a coupled to a memory cell 540 a. Thememory unit 130 also comprises a second fuse set 530 b coupled to amemory cell 540 b, a third fuse set 530 c coupled to a memory cell 540c, a fourth fuse set 530 d coupled to a memory cell 540 d, and an Nthfuse set 530 e coupled to a memory cell 540 e. Additionally, variousconductive lines may interconnect various portions of the memory cells,such as the lines 555, 565, 575.

In one embodiment, the line 555 may be coupled to a ground signal. Theredundancy programming unit 320 is capable of affecting the status ofthe fuse sets 530, such that the memory cells 540 may be programmed inor out. For example, the redundancy programming unit 320 may modify thethreshold voltage of a particular transistors associated with the memorycell 540 a and the first fuse set 530 a. A common tap on the line 555may be formed, and depending on which gate of the particular transistorassociated with the various elements is turned on, charge trapping maybe performed on one side or the other side of the common tap.Additionally, the various lines, such as lines 565 and 575, may be usedto read back the particular connections or disconnections made upon thevarious elements of the memory unit 130.

A memory element in the memory unit 130 may be programmed by grounding agate terminal associated with the access transistor of a particularelement and grounding a substrate of the transistor. A particular fuse,such as the first fuse set 530 a, may be selected and the voltage of thefuse node may be ramped up to a higher voltage, such as 7 volts.Therefore, a particular element may be programmed or re-programmed. Theread back of the status of that particular element may be performed byapplying a voltage over the threshold voltage, such as 100 millivoltslevel over the threshold voltage to the gate of the accessed transistor.The change in the threshold voltage may be used to determine whether aparticular element is active or inactive. Therefore, utilizing thecharge trapping techniques provided herein, various elements, such as asecond fuse set 530 b and memory cell 540 b, may be programmed “in”while other elements, such as the fourth fuse set 530 d and memory cell540 d, are programmed “out”. Hence, concepts provided by the presentinvention may be used to perform an efficient redundancy programming,such that various elements of the memory unit 130 may be programmed orde-programmed to eliminate various faulty elements and invoke otherelements of the memory unit 130.

As shown in FIG. 6, one embodiment of implementing a fuse set andcorresponding memory cell in accordance with embodiments of the presentinvention is illustrated. In one example, the memory cell may comprisememory elements 650, which may be surrounded by a fuse(1) 610, a fuse(2)620, a fuse(3) 630, and a fuse(4) 640. A line 660 may be accessible byvarious portions of the memory cell and, in one embodiment, may be aground connection. Various metal lines, such as line 670, may provide aread back path to the sense unit 330. The setup illustrated in FIG. 6may provide a common tap that is formed and, depending on which gate isturned on, one side or the other side of the memory cell may be turnedon. In other words, charge trapping upon one side or the other side ofthe memory cell may be performed when using the connections provided bythe memory elements.

One of the fuses 610, 620, 630, 640 illustrated in FIG. 6 may beactivated, such that an electrical path to a particular memory portionmay be chosen. If the memory element 650 is then activated, variouslines, such as lines 670 may be used to read back to verify suchprogramming. Therefore, the setup illustrated in FIG. 6 may be used toprogram various memory cells in accordance with embodiments of thepresent invention. One of the fuses 610, 620, 630, 640 may be selectedand a node of the fuse may be ramped up to a higher voltage, such as 7volts. This method may be used to program a particular memory cell. Uponprogramming, a read back may be performed, for example, by applying avoltage, such as 100 millivolts over the threshold voltage to gate. Thesense unit 330 may then sense, for example, at a common ground node, andcompare with other points of the memory unit 130 to verify programming.Using these methods, various locations of the memory unit 130 may beprogrammed. Utilizing embodiments of the present invention, higheryields of memory devices may be realized. The teachings of the presentinvention may be implemented on a plurality of types of memory devices,such as flash memory, DRAM memory, and other volatile and/ornon-volatile memory devices.

The particular embodiments disclosed above are illustrative only, as theinvention may be modified and practiced in different but equivalentmanners apparent to those skilled in the art having the benefit of theteachings herein. Furthermore, no limitations are intended to thedetails of construction or design herein shown, other than as describedin the claims below. It is therefore evident that the particularembodiments disclosed above may be altered or modified and all suchvariations are considered within the scope and spirit of the invention.Accordingly, the protection sought herein is as set forth in the claimsbelow.

1. A device, comprising: a transistor comprising a charge trapping area,wherein a threshold voltage of said transistor is modified upon trappingof charges in said charge trapping unit; a memory element; and a fuseassociated with said memory element, said fuse to enter in analternative state in response to modifying said threshold voltage ofsaid transistor, thereby at least one of programming and de-programmingsaid memory element.
 2. The device of claim 1, wherein said device is amemory device.
 3. The device of claim 2, wherein said memory device isat least one of a static random access memory (SRAM), a pseudo-staticstatic random access memory (PSRAM), a dynamic random access memory(DRAM), a double-data rate SDRAM (DDR SDRAM), a DDR I device, a DDR IIdevice, a Rambus DRAM (RDRAM), and a FLASH memory.
 4. The device ofclaim 1, wherein said transistor is an N-channel device.
 5. The deviceof claim 1, wherein said transistor is coupled to a plurality ofconductive lines.
 6. The device of claim 5, wherein at least one of saidplurality of conductive lines is coupled to ground.
 7. The device ofclaim 1, wherein at least one of said plurality of conductive lines iscoupled to a programmable voltage.
 8. The device of claim 1, whereinsaid threshold voltage is modified by an increase of about 100millivolts.
 9. The device of claim 1, wherein said threshold voltage ismodified by an increase of about 200 millivolts.
 10. The device of claim1, wherein said transistor comprises an LDD region proximate a sourceregion and a masked-off region proximate a drain region to prevent anLDD region proximate said drain region.
 11. A circuit for performing aredundancy programming, comprising: an access transistor comprising acharge trapping area, wherein a threshold voltage of said accesstransistor is modified upon trapping of charges in said charge trappingunit; a memory element; and a fuse associated with said memory element,said fuse to become blown in response to modifying said thresholdvoltage of said access transistor, thereby de-programming said memoryelement.
 12. The circuit of claim 11, wherein said access transistor isan N-channel device.
 13. The circuit of claim 11, further comprising aplurality of conductive lines.
 14. The circuit of claim 13, wherein atleast one of said plurality of conductive lines is coupled to ground.15. The circuit of claim 11, wherein at least one of said plurality ofconductive lines is coupled to a programmable voltage.
 16. The circuitof claim 11, wherein said access transistor comprises an LDD regionproximate a source region and a masked-off region proximate a drainregion to prevent an LDD region proximate said drain region.
 17. Asystem board, comprising: a controller for performing a memoryoperation; and a memory device operatively coupled to said controller,said memory device to provide memory access to said controller, saidmemory device comprising: an access transistor comprising a chargetrapping area, wherein a threshold voltage of said access transistor ismodified upon trapping of charges in said charge trapping unit; a memoryelement; and a fuse associated with said memory element, said fuse tobecome blown in response to modifying said threshold voltage of saidaccess transistor, thereby de-programming said memory element.
 18. Thesystem board of claim 17, wherein said memory device is at least one ofa static random access memory (SRAM), a pseudo-static static randomaccess memory (PSRAM), a dynamic random access memory (DRAM), adouble-data rate SDRAM (DDR SDRAM), a DDR I device, a DDR II device, aRambus DRAM (RDRAM), and a FLASH memory.
 19. The system board of claim18, wherein said access transistor is an N-channel device.
 20. Thesystem board of claim 18, wherein said access transistor is coupled to aplurality of conductive lines.
 21. The system board of claim 20, whereinat least one of said plurality of conductive lines is coupled to ground.22. The system board of claim 21, wherein at least one of said pluralityof conductive lines is coupled to a programmable voltage.
 23. The systemboard of claim 17, wherein said access transistor comprises an LDDregion proximate a source region and a masked-off region proximate adrain region to prevent an LDD region proximate said drain region.
 24. Asystem for performing a redundant memory programming, comprising: adevice testing unit for performing a memory test; a memory deviceoperatively coupled to said device testing unit, said memory devicecomprising: an access transistor comprising a charge trapping area,wherein a threshold voltage of said access transistor is modified upontrapping of charges in said charge trapping unit; a memory element; anda fuse associated with said memory element, said fuse to enter in analternative state in response to modifying said threshold voltage ofsaid access transistor by said device testing unit, thereby at least oneof programming and de-programming said memory element.
 25. The system ofclaim 24, wherein said device testing unit comprising: a redundantprogramming unit capable of modifying said threshold voltage forperforming said redundant memory programming; and a sense unit capableof sensing the threshold voltage of said access transistor.
 26. Thesystem of claim 24, wherein said sense unit comprises at least one senseamplifier.
 27. The system of claim 24, wherein said memory device is atleast one of a static random access memory (SRAM), a pseudo-staticstatic random access memory (PSRAM), a dynamic random access memory(DRAM), a double-data rate SDRAM (DDR SDRAM), a DDR I device, a DDR IIdevice, a Rambus DRAM (RDRAM), and a FLASH memory.
 28. The system ofclaim 24, wherein said access transistor is an N-channel device.
 29. Thesystem of claim 24, wherein said access transistor is coupled to aplurality of conductive lines.
 30. The system of claim 29, wherein atleast one of said plurality of conductive lines is coupled to ground.31. The system of claim 24, wherein at least one of said plurality ofconductive lines is coupled to a programmable voltage.
 32. The system ofclaim 24, wherein said threshold voltage is modified by an increase ofabout 100 millivolts.
 33. The system of claim 24, wherein said thresholdvoltage is modified by an increase of about 200 millivolts.
 34. Thesystem of claim 24, wherein said memory device comprises: a first fuseset comprising a plurality of fuses; a first memory cell associated withsaid first fuse set, wherein a charge trapping may be performed uponsaid memory cell based upon de-activation of at least one fuse in saidfirst fuse set; a second fuse set comprising a plurality of fuses; and asecond memory cell associated with said second fuse set, wherein acharge trapping may be performed upon said memory cell based uponde-activation of at least one fuse in said second fuse set.
 35. Thesystem of claim 34, wherein said first fuse set comprises four fusesthat may be controlled for activating one of a plurality of memoryelements associated with said first memory cell.
 36. The system of claim35, wherein said second fuse set comprises four fuses that may becontrolled for activating one of a plurality of memory elementsassociated with said second memory cell.
 37. The system of claim 24,wherein said access transistor comprises an LDD region proximate asource region and a masked-off region proximate a drain region toprevent an LDD region proximate said drain region.
 38. A method,comprising: programming a memory element in a memory device bycontrolling a threshold voltage associated with said memory device,controlling said threshold voltage comprising controlling the thresholdvoltage of an access transistor by trapping charges in a charge trappingarea of said access transistor, wherein a threshold voltage of saidaccess transistor is modified upon trapping of charges in said chargetrapping unit, wherein programming said memory element further comprisesactivating a fuse coupled to said memory element in response to saidchanging said threshold voltage, for activating said memory element. 39.The method of claim 38, further comprising: grounding a gate terminal ofsaid access transistor; grounding a substrate of said threshold voltage;and providing a high voltage upon a drain terminal of said accesstransistor to perform trapping of charges into an overlap region of aregion associated with said drain terminal.
 40. The method of claim 38,further comprising: sensing a first conduction level associated with afirst memory element of said memory device; sensing a second conductionlevel associated with a second memory element of said memory device; andcomparing said first and second conduction levels to determine whetherat least one of said first memory element and said second memory elementis active.
 41. The method of claim 40, further comprising activatingsaid first memory element by modifying a level of a threshold associatedwith said first memory element.
 42. The method of claim 40, furthercomprising de-activating said second memory element by modifying a levelof a threshold associated with said second memory element.
 43. Themethod of claim 38, further comprising modifying said threshold voltageby an increase of about 100 millivolts.
 44. The method of claim 38,further comprising modifying said threshold voltage by an increase ofabout 200 millivolts.
 45. An apparatus, comprising: means forprogramming a memory element in a memory device by controlling athreshold voltage associated with said memory device, means forcontrolling said threshold voltage comprising means for controlling thethreshold voltage of an access transistor by trapping charges in acharge trapping area of said access transistor, wherein a thresholdvoltage of said access transistor is modified upon trapping of chargesin said charge trapping unit, wherein means for programming said memoryelement further comprises means for activating a fuse coupled to saidmemory element in response to said changing said threshold voltage, foractivating said memory element.